Angular dependence of Hall effect and magnetoresistance in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">SrRuO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>?</mml:mo><mml:msub><mml:mi mathvariant="normal">SrIrO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> heterostructures

The perovskite ${\mathrm{SrRuO}}_{3}$ is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report the synthesis investigation atomically flat artificial multilayers with spin-orbit semimetal ${\mathrm{SrIrO}}_{3}$ in combination band-structure calculations Hubbard $U$ term topological analysis. latter reveal an reconstruction emergence Ru-$4{\mathrm{d}}_{xz}$ bands near interface, ferromagnetic interlayer coupling, negative Berry-curvature contribution to anomalous Hall effect. analyze effect magnetoresistance measurements as function field angle from out-of-plane towards in-plane orientation (either parallel or perpendicular current direction) by two-channel model. easy direction tilted about ${20}^{\ensuremath{\circ}}$ sample normal for low fields, rotating increasing fields. Fully strained epitaxial growth enables strong anisotropy magnetoresistance. An additional contribution, not accounted model, compatible stable skyrmions only up critical roughly ${45}^{\ensuremath{\circ}}$ normal. Within thin film plane peaklike suggests formation nontrivial spin structure.